• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to an optoelectronic device (1) comprising at least one three-dimensional semiconductor structure (2) extending along a longitudinal axis (Δ) substantially orthogonal to a plane of a substrate (3) on which it rests, and comprising a first doped portion (10) extending from a face of the substrate (3) along the longitudinal axis (Δ); an active portion (30) comprising at least one quantum well (32), extending from the first doped portion (10) along the longitudinal axis; a second doped portion (20) extending from the active portion (30) along the longitudinal axis (Δ); characterized in that the quantum well (32) of the active portion (30) has a mean diameter greater than that of said first doped portion (10), and is laterally covered by a passivation layer.
    公开号:FR3044470A1
    申请号:FR1561589
    申请日:2015-11-30
    公开日:2017-06-02
    发明作者:Xin Zhang；Bruno-Jules Daudin；Bruno Gayral；Philippe Gilet
    申请人:Commissariat a lEnergie Atomique CEA；Aledia；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    OPTOELECTRONIC DEVICE COMPRISING THREE DIMENSIONAL SEMICONDUCTOR STRUCTURES IN AXIAL CONFIGURATION
    TECHNICAL AREA
    The field of the invention is that of optoelectronic devices comprising three-dimensional semiconductor structures, such as nanowires or microwires, adapted to emit or detect light radiation.
    STATE OF THE PRIOR ART
    There are optoelectronic devices comprising three-dimensional semiconductor structures of nanowires or microwires forming, for example, light-emitting diodes. The nanowires or microfilts usually comprise a first doped portion, for example of the n-type, and a second doped portion of the opposite conductivity type, for example of the p type, between which there is an active portion comprising at least one quantum well.
    They may be made in a so-called radial configuration, also called core / shell, in which the active portion and the second p-doped portion are formed at the periphery of the first n-doped portion. They can also be made in a so-called axial configuration, in which the active portion and the second p-doped portion do not cover the periphery of the first n-doped portion but extend essentially along a longitudinal axis of epitaxial growth.
    The nanowires or microfilts in axial configuration have a lower emitting surface than the wires in radial configuration, but have the advantage of being made of a semiconductor material of better crystalline quality thus offering a higher internal quantum efficiency, in particular because a better relaxation of the constraints at the interfaces between the semiconductor portions. In the case of quantum wells made with InGaN, the nanowires or microfilts in axial configuration thus make it possible to incorporate more indium to emit for example in red or green. By way of example, the publication by Bavencove et al., Entitled Submicrometer resolved optical characterization ofgreen nanowire-based light emitting diodes, Nanotechnoloy 22 (2011) 345705, describes an example of an optoelectronic device with nanowires in axial configuration, in which a part upper second doped portions p is in mutual contact, and on which rests a polarization electrode transparent to the light radiation emitted by the son. Each active portion here has a mean diameter substantially identical to that of the first N-doped portion and comprises multiple quantum wells. The son are made based on GaN by molecular beam epitaxy.
    However, there is a need to develop optoelectronic devices comprising three-dimensional semiconductor structures of the nanowire or microfilter type having improved optical efficiency.
    DISCLOSURE OF THE INVENTION The object of the invention is to remedy at least in part the drawbacks of the prior art, and more particularly to propose an optoelectronic device comprising at least one three-dimensional semiconductor structure whose optical efficiency is improved. For this, the object of the invention is an optoelectronic device comprising at least one three-dimensional semiconductor structure extending along a longitudinal axis substantially orthogonal to a plane of a substrate on which it rests, and comprising a first doped portion, extending from one side of the substrate along the longitudinal axis; an active portion comprising at least one quantum well, extending from the first portion doped along the longitudinal axis; and a second doped portion extending from the active portion along the longitudinal axis.
    According to the invention, the quantum well of the active portion has a mean diameter greater than that of said first doped portion, and is laterally covered by a passivation layer.
    Some preferred but non-limiting aspects of this optoelectronic device are the following:
    The optoelectronic device may include a plurality of three-dimensional semiconductor structures extending substantially parallel to each other, the active portions of which are in mutual contact.
    The quantum well (s) of each active portion are separated from the quantum well (s) of the adjacent active portion by the passivation layers in mutual contact.
    The optoelectronic device may have a density of first doped portions per unit area of the substrate of between 0.5 × 10 10 cm 2 and 1.5 × 10 10 cm 2, the first doped portions being distinct from each other and having a substantially constant average diameter according to the invention. longitudinal axis.
    The passivation layer may have an average thickness greater than or equal to 2 nm, and preferably between 2 nm and 15 nm.
    The first doped portion may be made of a compound III-V, a compound II-VI, or an element or compound IV, the passivation layer may be made of a compound comprising at least one element present in the compound of the first portion doped.
    The average diameter of the quantum well (s) may be between 115% and 250% of the average diameter of the first doped portion.
    The active portion may comprise a single quantum well extending continuously between the first and second doped portions, and said single quantum well being covered laterally by the passivation layer.
    The active portion can comprise several layers forming quantum wells or quantum boxes interposed between barrier layers, laterally covered by the passivation layer.
    The three-dimensional semiconducting structure may be made of a material comprising predominantly a III-N compound, the passivation layer being preferably made of a compound selected from GaN, AIGaN and ΙΆΙΝ. The invention also relates to a method for producing an optoelectronic device according to any one of the preceding features, wherein the three-dimensional semiconductor structure (s) are formed by molecular beam epitaxy.
    The method may comprise epitaxial growth-forming steps of at least one three-dimensional semiconductor structure in which: i) the first doped portion is formed, which extends from one side of the substrate along the longitudinal axis; ii) forming the active portion comprising at least one quantum well, which extends from the first portion doped along the longitudinal axis; during step ii), the quantum well of the active portion is formed so as to have a mean diameter greater than that of the first doped portion; in addition, a passivation layer is formed which laterally covers the quantum well.
    The formation of the passivation layer may be concomitant with the formation of the quantum well.
    The three-dimensional semiconducting structure may comprise mainly a compound III-V, the step ii) of formation of the active portion being carried out at a value T2 of epitaxial growth temperature lower than a value T1 during the step i) of formation of the first doped portion, and preferably between 600 ° C and 680 ° C, and being carried out at a ratio between the atomic flux of elements III on elements V between 0.33 and 0.60. The step i) of forming the first doped portion may comprise a sub-step of nucleation of the compound III-V carried out at a growth temperature such that a density of first doped portions per unit area of the substrate is included between 0.5 x 1010 cm -1 and 1.5 x 10 10 cm -2.
    BRIEF DESCRIPTION OF THE DRAWINGS Other aspects, objects, advantages and characteristics of the invention will appear better on reading the following detailed description of preferred embodiments thereof, given by way of non-limiting example, and made in reference to the accompanying drawings in which: Figure 1 is a schematic sectional view of an optoelectronic device according to a first embodiment, comprising three-dimensional semiconductor structures in axial configuration whose active portion is enlarged and passivated; FIG. 2 is a diagrammatic sectional view of another example of a three-dimensional semiconducting structure in axial configuration, the active portion of which comprises a single quantum well; FIG. 3 is a diagram showing an example of evolution of the expansion ratio Rd of the active portion as a function of the growth temperature T and the nominal ln / lll ratio; FIG. 4 illustrates an example of an evolution of the atomic proportion of indium and gallium following a cross-section of the active portion of the three-dimensional semiconductor structure shown in FIG. 2, from a dispersive energy analysis (EDX, for energy dispersive X-roy spectrometry in English); FIG. 5 is a diagrammatic sectional view of an optoelectronic device according to a second embodiment, comprising three-dimensional semiconducting structures in axial configuration, the active portions of which are in mutual contact; FIG. 6a is a diagrammatic sectional view of a three-dimensional semiconductor structure variant in axial configuration, the active portion of which comprises multiple quantum wells in the form of layers; and FIG. 6b is a schematic sectional view of another variant of a three-dimensional semiconductor structure in axial configuration, the active portion of which comprises multiple quantum wells in the form of quantum dots.
    DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
    In the figures and in the remainder of the description, the same references represent identical or similar elements. In addition, the various elements are not represented on the scale so as to favor the clarity of the figures. In addition, the terms "substantially", "approximately", "approximately" are "within 10%". The invention relates to an optoelectronic device comprising three-dimensional semiconductor structures adapted to form light-emitting diodes or photodiodes.
    The three-dimensional semiconducting structures have an elongated shape along a longitudinal axis Δ, that is to say whose longitudinal dimension along the longitudinal axis Δ is greater than the transverse dimensions. The three-dimensional structures are then called "son", "nanowires" or "microfilts". The transverse dimensions of the wires, that is to say their dimensions in a plane orthogonal to the longitudinal axis Δ, may be between 5 nm and 5 μm, for example between 10 nm and 500 nm, and preferably between 30 nm and 300 nm. . The height of the wires, that is to say their longitudinal dimension along the longitudinal axis Δ, is greater than the transverse dimensions, for example 2 times, 5 times and preferably at least 10 times greater.
    The cross section of the son, in a plane orthogonal to the longitudinal axis Δ, may have different shapes, for example a circular shape, oval, polygonal for example triangular, square, rectangular or hexagonal. The diameter is defined here as a quantity associated with the perimeter of the wire at a cross-section. It can be the diameter of a disc having the same surface as the cross section of the wire. The local diameter is the diameter of the wire at a given height thereof along the longitudinal axis Δ. The average diameter is the average, for example arithmetic, of local diameters along the wire or a portion thereof.
    FIG. 1 schematically illustrates a partial sectional view of a first embodiment of an optoelectronic device 1 comprising three-dimensional semiconductor structures 2 forming axial wired light-emitting diodes.
    A three-dimensional orthonormal reference (Χ, Υ, Ζ) is defined here and for the rest of the description, in which the plane (X, Y) is substantially parallel to the plane of a substrate of the optoelectronic device, the Z axis being oriented according to a direction orthogonal to the plane of the substrate.
    In this example, the optoelectronic device 1 comprises: a substrate 3, for example made of a semiconductor material, having two faces, said rear 3a and before 3b, opposite to each other; a first polarization electrode 4, here in contact with the rear face 3a of the substrate; a nucleation layer 5, made of a material adapted to the epitaxial growth of the three-dimensional semiconducting structures, covering the front face 3b of the substrate; three-dimensional semiconductor structures 2, here in the form of wires, which extend from the nucleation layer 5 along a longitudinal axis Δ oriented substantially orthogonal to the plane (X, Y) of the front face 3b of the substrate 3 each wire 2 having a first doped portion 10 in contact with the nucleation layer 5, an active portion 30 and a second doped portion 20 disposed in the extension of the first doped portion 10 along the longitudinal axis Δ; a second polarization electrode layer 6, in contact with each second doped portion 20.
    Each three-dimensional semiconductor structure 2 here forms a wired electroluminescent diode in axial configuration, adapted to emit light radiation at its active portion. The son 2 are said to be in axial configuration insofar as each active portion 30 essentially covers an upper face 11 of the first doped portion 10 substantially orthogonal to the longitudinal axis Δ, and extends along the longitudinal axis Δ. In addition, the second doped portion 20 substantially covers an upper face 31 of the active portion 30 substantially orthogonal to the longitudinal axis Δ, and extends along the longitudinal axis Δ. The son 2 thus have an axial configuration which is thus different from the heart / shell configuration mentioned above.
    Each wire 2 is made from at least one semiconductor material, which may be chosen from compounds III-V comprising at least one element of column III and at least one element of column V of the periodic table; compounds II-VI having at least one element of column II and at least one element of column VI; or the elements or compounds IV having at least one element of column IV. By way of example, III-V compounds may be III-N compounds, such as GaN, InGaN, AIGaN, AlN, InN or AlInGaN, or even compounds comprising an arsenic or phosphorus-type V column element, for example. example AsGa or InP. On the other hand, compounds II-VI can be CdTe, HgTe, CdHgTe, ZnO, ZnMgO, CdZnO or CdZnMgO. Finally, elements or compounds IV may be used, such as Si, C, Ge, SiC, SiGe, or GeC. The semiconductor material of the three-dimensional structure may comprise a dopant, for example silicon providing an n-type doping of a III-N compound, or magnesium providing a p-type doping.
    The active portion 30 is the portion at which most of the light radiation of the wire is emitted. It comprises at least one quantum well, made of a second material having a band gap energy lower than that of the first doped portion and the second doped portion, corresponding to an emissive zone of the active portion. The quantum well may be thick or be formed of at least one thin layer preferably disposed between two barrier layers, thus improving the confinement of the charge carriers. The second material comprises the compound III-V, II-VI or IV of the first and second doped portions in which at least one additional element is incorporated. By way of example, in the case of a wire made from GaN, the second material forming the quantum well is preferably InGaN. The atomic percentage of the additional element is a function of the optical properties sought and the emission spectrum of the wire. As detailed below, the active portion may be formed of a single quantum well in a portion of a semiconductor material extending between the first and second doped portions. Alternatively, it may comprise several quantum wells in the form of layers or boxes interposed between barrier layers.
    According to a preferred embodiment, each wire 2 is made of GaN, where the quantum wells are made of InGaN. The first doped portion 10 may be formed of GaN, and be doped with the first type of conductivity, for example n-type, in particular with silicon. The height of the first doped portion may be between 100 nm and 10 pm, for example between 500 nm and 5 pm, and in particular be substantially equal to lpm.
    The active portion 30 may comprise one or more quantum wells, for example made in InGaN. The active portion may comprise a single quantum well which extends continuously along the longitudinal axis Δ between the first and second doped portions 10, 20. Alternatively, it may comprise multiple quantum wells and is then formed of an alternation, following the longitudinal axis Δ, quantum wells made for example of InGaN, and barrier layers made for example of GaN. The height of the active portion may be between 20 nm and 500 nm, for example between 50 nm and 200 nm, and in particular be substantially equal to 100 nm.
    The second doped portion 20 may be formed of GaN, and be doped with the second type of conductivity opposite to the first, for example of the p type, in particular magnesium. The height of the second doped portion may be between 50 nm and 5 μm, for example between 100 nm and 1 pm and in particular be of the order of a few tens or hundreds of nanometers so as to limit the series resistance associated with this doped portion. The height can thus be substantially equal to 400 nm.
    The second doped portion 20 may comprise an electron-blocking layer 22 located at the interface with the active portion 30. The electron-blocking layer may be formed of a ternary compound III-N, for example AIGaN or ΓΑΙΙηΝ, advantageously doped p. It makes it possible to increase the rate of radiative recombinations within the active portion.
    The second polarization electrode 6 is in contact with an upper face 21 of the doped portion 20 and is adapted to ensure the injection of charge carriers into the wires 2.
    It is made of a substantially transparent material vis-à-vis the light radiation emitted by the wire, for example indium tin oxide (ITO, for Indium Tin Oxide). It has a thickness of a few nanometers to a few tens or hundreds of nanometers.
    Moreover, each wire 2 rests on a substrate 3 whose upper face 3b can be coated with the nucleation layer 5. The nucleation layer 5 is made of a material that promotes the nucleation and growth of the wires, for example the nitride. aluminum (AlN) or aluminum oxide (Al2O3), magnesium nitride (MgxNy), nitride or carbide of a transition metal or any other suitable material. The thickness of the nucleation layer may be of the order of a few nanometers or a few tens of nanometers. In this example, the nucleation layer is AlN.
    The substrate 3 may be a one-piece structure or be formed of a stack of layers such as a substrate of the SOI type (acronym for Silicon On Insulator). The substrate may be of a semiconductor material, for example silicon, germanium, silicon carbide, or a III-V or II-VI compound. It can also be made of a metallic material or an insulating material. It may comprise a layer of graphene, molybdenum sulphide or selenide (MoS2, MoSe2), or any other equivalent material. In this example, the substrate is highly n-type monocrystalline silicon.
    The first polarization electrode 4 is in contact with the substrate 3, here electrically conductive, for example at its rear face 3a. It can be made of aluminum or any other suitable material.
    Thus, when a potential difference is applied to the wires 2 in a forward direction via the two polarization electrodes, the wires 2 emit light radiation whose emission spectrum has a peak of intensity at a length of wave depending mainly on the composition of the quantum well.
    As illustrated in FIG. 1, the active portion 30 comprises at least one quantum well 32 whose average diameter is greater than the average diameter of the first doped portion 10. The first doped portion 10 here has an average diameter approximately equal to the local diameter . The average diameter of the first doped portion 10 may be between 5 nm and 5 pm, for example between 10 nm and 100 nm, and in particular be substantially equal to 50 nm. In the case of a single quantum well, the mean diameter is the average of the local diameters of the same quantum well along the longitudinal axis Δ. In the case of multiple quantum wells in the form of layers or boxes, the local diameter is the diameter of a quantum well layer or the cumulative diameter of the quantum boxes located at the same cross-section. The average diameter is the average of the local diameters of the different layers or quantum boxes.
    The active portion 30 then has a local diameter greater than the average diameter of the first doped portion 10. In the example of Figure 1, it also has a mean diameter that increases as one moves away from the first portion 10 doped, from a first value substantially equal to the local diameter of the first doped portion 10 at its upper face 11, to a second maximum value at the interface between the active portion 30 and the second Doped portion 20. The active portion 30 then has a mean diameter greater than that of the first doped portion 10.
    This results in an enlargement of each wire 2 in the plane (X, Y) at the active portion 30. The average diameter of the active portion 30 may be between 110% and 400% of the average diameter of the first portion doped 10, and preferably between 115% and 250% so as to have a better crystalline quality and / or an emission spectrum whose width at half height (FWHM, for Full Width at Half Maximum in English) peak emission is reduced. By way of example, for an average diameter of the first doped portion of about 50 nm, the average diameter of the active portion 30 may be equal to about 75 nm.
    The second doped portion 20 extends from the active portion 20 along the longitudinal axis Δ of the wire 2. In this example, the local diameter of the second doped portion 20 increases progressively, until it comes into contact with the second doped portion 20 son 2 neighbors and thus cause the coalescence of the son 2 at the second doped portions 20. Thus, the local diameter increases by a value substantially equal to the local diameter of the active portion 30 at its upper face 31 up to a value corresponding, for example, to contact with the second neighboring doped portions. For example, for a mean diameter of about 50 nm for the first doped portion 10 and about 75 nm for the active portion 30, the average diameter of the second doped portion 20 may be equal to about 100 nm. Alternatively, the local diameter of the second doped portion 20 may be substantially constant along the longitudinal axis Δ and thus be substantially equal to the value of the local diameter of the active portion 30 at its upper face 31.
    In addition, the active portion 30 comprises a passivation layer 34, also called a passivation shell, located at its side wall 35. The passivation layer 34 covers the lateral edge 33 of the quantum well or wells 32, preferably continuously the same. along their circumference. The lateral edge 33 of the quantum well 32 is the surface of the quantum well, in a transverse plane (X, Y), facing the side wall 35 of the active portion 30. The passivation layer 34 has a thickness which depends on the dielectric constant or the bandgap energy of the material forming the passivation layer, so that the passivation layer makes it possible to limit the effect of any surface conditions bound for example to the enlargement of the active portion these surface states may lead to non-radiative recombinations in the quantum well or wells. The thin passivation layer may thus have a thickness of between 2 nm and 15 nm, for example between 5 nm and 10 nm.
    The passivation layer 34 may thus be made of a material chosen from the compounds III-V, the compounds II-VI, the compounds or elements IV, or even the dielectric materials such as nitrides and oxides of aluminum (AI203) or of silicon (SiO2, SI3N4). By way of example, in the case of first and second doped portions made of GaN and an InGaN quantum well, the passivation layer may be made of GaN, AlN or AlGaN, for example unintentionally doped.
    Preferably, the thickness and the material of the passivation layer 34 are chosen so that the passivation layer has an electrical resistance or a band gap energy greater than that of the quantum wells, so as to optimize the transport of the carriers of the passivation layer. charge towards the quantum well or quantum wells. By way of example, the passivation layer may be formed of AlN, AlGaN or even GaN with a thickness of between 2 nm and 15 nm.
    When the material forming the first and second doped portions 10, 20 is a III-V compound or a II-VI compound, the material forming the passivation layer 34 is also a III-V compound or a II-VI compound respectively, and can include the same element of column V or VI as the material of the first and second doped portions. By way of example, in the case of first and second doped portions made of GaN and an InGaN quantum well, the passivation layer may be made of GaN, AlN, or AlGaN.
    As will be detailed below, the passivation layer 34 is advantageously formed concomitantly with the formation of the quantum well or wells 32. It thus limits the surface states at the lateral edge of the quantum well or wells, which contributes to increasing the internal quantum yield of the active portion.
    Thus, the son of the optoelectronic device each have an optical efficiency improved by the combined effect of enlargement and passivation of the active portion. The optical efficiency corresponds here to the ratio of the light flux emitted by the optoelectronic device to the electrical power absorbed by the device.
    Indeed, the enlargement of the active portion leads to an emission surface increased by wire and therefore to a higher emitted light flux. In addition, the passivation of the lateral edge of the quantum well (s) of the active portion makes it possible to increase the internal quantum yield of the active portion by limiting the impact of the surface states at the lateral edge of the quantum wells. Indeed, the surface states, resulting for example from structural defects or dangling bonds may in particular appear during the expansion of the active portion, may be at the origin of non-radiative recombinations in the active portion. Thus, the passivation of the active portion reduces the rate of non-radiative recombinations in the active portion and thus increases the internal quantum yield of the active portion of the wire. The enlargement of the active portion and the passivation of the side wall thereof therefore lead to an increase in the optical efficiency of each wire.
    FIG. 2 is a partial schematic view of a three-dimensional semiconductor structure 2 of an optoelectronic device according to a first variant, the three-dimensional semiconductor structure 2 forming a wire-shaped electroluminescence diode in axial configuration, the active portion of which comprises a single well. In this example, the wire 2 is made of GaN and the quantum well is InGaN.
    The active portion 30 comprises a single quantum well 32 made of a second semiconductor material, in this case InGaN, comprising the same compound GaN as that of the first and second doped portions 10, 20, in which is incorporated an additional element, here of indium. The atomic proportion of the elements of the compound forming the second material is preferably substantially homogeneous within the quantum well. InGaN's unique quantum well 32 forms a portion that extends between the first and second doped portions 10, 20 and has a mean diameter greater than the average diameter of the first doped portion 10. As illustrated in FIG. be formed of two said lower 32a and upper 32b parts, arranged one on the other along the longitudinal axis Δ, the lower portion 32a being located between the first doped portion 10 and the upper portion 32b, and having a local diameter which increases continuously from the value of the local diameter of the first doped portion 10 at the upper face 11. The second portion 32b has a substantially constant local diameter over its entire height.
    In addition, the active portion 30 has a passivation layer 34 at its side wall 35, which covers the lateral edge 33 of the InGaN quantum well 32, both at the first portion 32a and the second portion 32b. It is made of a material identical to the GaN compound of the first and second doped portions, here unintentionally doped. Alternatively, it may be formed of AIN or AIGaN, thereby increasing the electrical resistance or band gap energy of the passivation layer. The passivation layer here has a thickness of between 2 nm and 15 nm, for example 5 nm.
    An exemplary method for producing the optoelectronic device is now described, in the case where the three-dimensional semiconductor structures are identical or similar to that described with reference to FIG. 2, in which the active portion 30 is formed of a single quantum well 32 In this example, the son 2 are made by molecular beam epitaxial growth (MBE, for Molecular Beam Epitaxy) and are made based on GaN.
    In the context of a molecular beam epitaxy, the parameters influencing the epitaxial growth are: the ratio lll / V nominal, defined as the ratio between the flow of elements of column III on the flow of elements of column V that is to say here the ratio Ga / N during the growth of the first and second portions doped with GaN; and the III / N ratio, also called Metal / N or (Ga + ln) / N, during growth of the InGaN quantum well; the ratio ln / lll nominal, defined as the ratio between the flow of the additional element, here indium, the flow elements of column III, that is to say gallium and indium; the growth temperature T, measured here at the substrate.
    In a first step, the first doped portion 10 is formed by epitaxial growth from the surface of the nucleation layer 5. For this, the growth temperature is brought to a first value Ti, for example between 775 ° C. and 850 ° C, for example 845 ° C. The ratio lll / V nominal, here the ratio Ga / N, has a value (lll / V) i less than 1 to place in conditions called rich nitrogen. It may for example be between 0.1 and 0.5. The GaN material of the first portion is n-doped with silicon. The first n-doped portion here has a height of about lpm and a mean diameter Dn of about 50 nm. A first doped portion is thus obtained which has the shape of a wire which extends along the longitudinal axis Δ. It has an upper face, opposite to the substrate and oriented along the crystallographic axis c, substantially flat.
    In a second step, the active portion 30 is formed by epitaxial growth from the upper face 11 of the first n-doped portion. For this, the growth temperature is brought to a second value T2 lower than the first value Ti, and included in a temperature range allowing incorporation of indium. In the case of InGaN, the indium incorporation range is typically between 560 ° C and 690 ° C. For example, the T2 value of the temperature is here 670 ° C. Moreover, the nominal ln / lll ratio has a value (ln / lll) 2 of between 5% and 70%, preferably between 10% and 50%, depending on the desired InGaN composition, for example here. % in order to obtain a light emission in the green at about 555nm.
    In addition, the ratio lll / N nominal has a value (lll / N) 2 greater than that (lll / V) i of the previous step by the indium flux. When the nominal Ga / N ratio remains constant at 0.3, the value (III / N) 2 is then greater than 0.3. It can be between 0.32 and 1.5, and preferably be between 0.33 and 0.60 so as to have a better crystalline quality and / or an emission spectrum whose width at half height ( FWHM, for Full Width at Half Maximum) the peak emission is reduced. For example, here it is 0.42. An active portion is thus obtained comprising a single InGaN quantum well with an atomic proportion of indium of approximately 28%, unintentionally doped, capable of emitting light radiation around 550 nm when the wire is directly biased.
    The inventors have demonstrated that the decrease in the growth temperature associated with the increase in the nominal ratio lll / N leads to an enlargement of the average diameter of the quantum well, and therefore of the active portion, vis-à-vis the of the first n-doped portion. As shown in the diagram of FIG. 3, the expansion ratio Rd = Dpa / Dn, where Dpa is the average diameter of the active portion and Dn that of the first doped portion, depends on the decrease in the growth temperature and of the increase of the ratio lll / N nominal. Thus, at a growth temperature lower than the value Ti, the increase in the nominal ln / lll ratio, and therefore in the nominal lll / N ratio, leads to an increase in the degree of widening Rd. Similarly, in ratio lll / N nominal value greater than the value (lll / N) i, the decrease in the growth temperature leads to an increase in the expansion ratio Rd. Thus, as a function of the desired emission spectrum which imposes a value of the nominal ratio lll / N , the increase in the nominal ratio lll / N and / or the decrease in the growth temperature makes it possible to obtain a widening ratio Rd of the active portion leading to an increase in the optical yield of the wire.
    In addition, the inventors have demonstrated that the epitaxial growth of the active portion 30 comprising a single quantum well 32 may be accompanied by the simultaneous formation of the passivation layer 34 surrounding the lateral edge 33 of the quantum well. Thus, the active portion is formed of a single InGaN quantum well whose side edge is passivated by a GaN passivation layer. As shown in FIG. 4, which corresponds to the atomic proportion of indium and gallium along a transverse profile of the active portion obtained by energy dispersive analysis (EDX), a passivating layer of GaN an average thickness of about 5 nm is located at the side edge of the InGaN quantum well. The concomitant formation of the single quantum well and the passivation layer makes it possible to increase the internal quantum yield of the active portion insofar as the surface states linked to the pendent bonds of the quantum well, potentially leading to non-radiative recombinations, are passivated by the passivation layer.
    An enlarged active portion 30 is then obtained whose lateral edge 33 of the quantum well 32 is passivated, which makes it possible to increase the optical efficiency of the wire. The active portion may have a height of 75 nm to 100 nm and an average diameter of 75 nm to 100 nm. The passivation layer may have an average thickness of about 2 nm to about 10 nm.
    In a third step, the second doped portion 20 is formed by epitaxial growth from the upper face 31 of the active portion 30. For this, the indium flux is stopped and then the value of the ratio III / N is increased. nominal, here the ratio Ga / N, at a value (Ill / N) 3 greater than that (Ill / N) 2 of the second step, and preferably greater than 1, for example equal to 4/3 approximately. In addition, the growth temperature has a value which can be equal to, lower than or greater than the second value, but which remains lower than the first value Ti, for example equal to about 670 ° C. This results in an enlargement of the second p-doped portion. This may have a height of about 350 nm and an average diameter of about 150 nm. The growth of the second p-doped portion may continue until there is mutual contact and coalescence between the second p-doped portions, thereby forming a substantially planar upper surface. Thus, a wire in axial configuration with enlarged active portion whose single quantum well has a passivated lateral edge. Several wires can thus be obtained here in mutual contact at their respective p-doped portions.
    Finally, in a last step, the second polarization electrode 6, made of an electrically conductive material and transparent to the light radiation emitted by the wires, is deposited on the upper surface 21 so as to be in contact with the second doped portions. 20. Thus, the application of a direct potential difference to the wires by the two polarization electrodes leads to the emission of a light radiation whose properties of the emission spectrum depends on the composition of the quantum well in the active portions. The optical efficiency is increased relative to that of the examples of the prior art mentioned above insofar as, at equivalent wire density, the son according to the invention have an enlarged active portion whose quantum well has a passivated lateral edge.
    FIG. 5 is a diagrammatic sectional view of an optoelectronic device 1 according to a second embodiment, which differs from those shown in FIGS. 1 and 2 essentially in that the wires 2 are in mutual contact at the level of the active portions. 30.
    Similarly to the embodiment of FIG. 1, the optoelectronic device 1 comprises a substrate 3 made of a semiconductor material, for example n-doped silicon, coated on its front face 3b with a nucleation layer 5 and whose face opposite 3a is covered with a layer forming the first polarization electrode 4.
    The three-dimensional semiconducting structures are here identical or similar to that described with reference to FIG. 2. They are in the form of wires in axial configuration which extend from the nucleation layer along the longitudinal axis Δ oriented substantially orthogonal to the plane (X, Y) of the front face of the substrate, each wire 2 having a first doped portion 10 in contact with the nucleation layer 5, an active portion 30 and a second doped portion 20 arranged in the extension of the first doped portion 10 along the longitudinal axis Δ.
    The active portion 30 here comprises a single quantum well 32 of average diameter greater than that of the first doped portion 10, whose lateral edge 33 is covered with a passivation layer 34. In this example, the active portion 30 comprises a single InGaN quantum well as well as GaN passivating layer.
    The wires 2 are in mutual contact at the active portions 30, so that each active portion is in contact with one or more adjacent active portions. There is also talk of coalescence of the threads at the level of the active portions. Specifically, the active portions 30 are in mutual contact at the passivation layers 34, the quantum well 32 of each active portion being then separated from the quantum well 32 of the adjacent active portion by the passivation layers 34 in contact with each other. The first doped portions 10 are not in mutual contact and are distinct from one another.
    Each active portion 30 here comprises a first portion 30a which extends from the first doped portion 10 along the longitudinal axis Δ, the local diameter of the quantum well 32 increases until the passivation layer 34 covering the Lateral edge 33 of the quantum well joins the passivation layer 34 of the active portion of the adjacent wire 2. A second portion 30b then extends from the first portion 30a, in which the quantum well 32 has a substantially constant local diameter along the longitudinal axis Δ, the latter being separated from the neighboring quantum well 32 by the passivation layers 34 in mutual contact along the longitudinal axis Δ.
    The optoelectronic device also comprises second doped portions 20 in mutual contact from the upper face 31 of the active portions. The second doped portions 20 are thus distinguished from those described with reference to FIG. 1 in that they form a p-doped layer which continuously covers all the active portions 30. It has a substantially homogeneous thickness here according to the lateral dimensions of the optoelectronic device in the plane (X, Y). The p-doped layer here comprises an electron-locking layer 22 located at the interface with the active portions 30. The upper face 21 of the p-doped layer is covered with the polarization electrode 6.
    Thus, the coalescence of the wires 2 at the level of the active portions 30, and no longer only at the level of the second doped portions 20, leads to optimizing the emission area of the optoelectronic device per unit area of the substrate. Moreover, the quantum well (s) 32 of each active portion 30 being separated from the quantum well (s) 32 of the adjacent active portion 30 by the passivation layers 34 in mutual contact, thus limiting the non-radiative recombinations at the grain formed by the coalescence of the passivation layers, thereby increasing the internal quantum yield of each wire. The optical efficiency of the optoelectronic device is then optimized.
    An exemplary method for producing the optoelectronic device according to the embodiment illustrated in FIG. 5 is now described. In this example, the son 2 are made by molecular beam epitaxial growth (MBE, for Molecular Beam Epitaxy) and are made based on GaN. Each active portion 30 comprises a single quantum well 32 of InGaN and the passivation layers 34 are here made of GaN. As mentioned above, the passivation layers can here be made of other III-N materials, such as ΓΑΙΝ or AIGaN.
    The coalescence of the active portions of the yarns is obtained by adjusting the density of the first doped portions per unit area of the substrate, or surface density, as well as by adjusting the enlargement ratio Rd of the active portions 30.
    The first step of forming the first portions doped by epitaxial growth is similar to that described above, with the difference that, initially, the growth temperature and the ratio lll / V nominal, here Ga / N, are adjusted. to obtain a sufficient surface density of first doped portions. By way of example, an initial value Ti of growth temperature equal to 840 ° C. to 5%, associated with an initial value (III / V) i of 0.5 of the nominal Ga / N ratio, leads to a surface density. first doped portions of between 0.5 × 10 10 cm 2 and 1.5 × 10 10 cm -2, for example substantially equal to 1.0 × 10 10 cm 2. Such a surface density of the first doped portions then makes it possible to obtain first active portions of good quality. crystalline and sufficiently spaced from each other, while subsequently allowing the coalescence of the active portions. In a second step, the value (III / V) i of the nominal Ga / N ratio can be maintained or decreased to a value of the order of 0.3, and the value of the temperature can be maintained. The epitaxial growth of the first portions doped along the longitudinal axis Δ is then performed.
    The second stage of formation of the active portions by epitaxial growth is similar to that described previously, with the difference that the growth temperature and the ratio III / V, here Metal / N, are adjusted to obtain an enlargement rate Rd. sufficient to ensure the coalescence of the active portions. By way of example, a coverage ratio greater than or equal to 115%, and for example between 115% and 250%, makes it possible to coalesce the active portions, especially when the surface density of the first doped portions is between 0.5.1010cnr2 and 5.1010cnr2. Thus, a T2 value of the growth temperature between 600 ° C. and 680 ° C. combined with a value (III / V) 2 of the Metal / N ratio of between 0.33 and 0.60 ensures the coalescence of active portions of good crystalline quality while optimizing the homogeneity of the atomic proportion of indium incorporated within each active portion. Thus, active portions 30 in mutual contact are obtained from which each single InGaN quantum well 32 is separated from the quantum well 32 of the adjacent active portion 30 by the passivation layers 34 in mutual contact. The upper faces 31 of the active portions 30 thus form a substantially planar surface on which a doped layer 20 may be deposited.
    The third step of forming the second epitaxially grown doped portions is the same as or similar to that described above. The indium flux is stopped then the value of the nominal ratio lll / N, here again Ga / N, is increased to a value (Ill / N) 3 greater than or equal to that (lll / N) 2 of the second step, and preferably greater than 1, for example equal to about 4/3. In addition, the growth temperature T3 may be equal to, lower than or greater than the second value, but here remains lower than the first value Ti, for example equal to about 670 ° C. A p-doped layer is thus obtained which continuously covers the active portions of the wires and has a substantially constant thickness.
    Finally, a polarization electrode layer 6 is deposited on the upper face 21 of the doped layer 20. The application of a potential difference to the live wires via the polarization electrodes leads to the emission of light radiation from the wires whose optical efficiency is optimized.
    Figure 6a is a schematic and partial view of a section of a three-dimensional semiconductor structure of an optoelectronic device in wire and axial configuration. The three-dimensional semiconductor structure is similar to that described with reference to FIG. 2 and differs essentially in that the active portion 30 comprises multiple quantum wells 32 in the form of an alternation of layers forming the quantum wells, and layers barriers.
    In this example, the wire 2 comprises a first doped portion 10 on which extends along the longitudinal axis Δ an active portion 30 having three layers 32 of quantum wells inserted between barrier layers. A second doped portion 20 extends along the longitudinal axis Δ on the active portion 30. The wire 2 is here obtained by molecular beam epitaxy and made based on GaN, the quantum well forming layers being here in InGaN.
    The active portion 30 here comprises a first portion 30a of GaN barrier layer which extends from the first doped portion 10 along the longitudinal axis Δ, the local diameter of the quantum well increases by a first value substantially equal to that of the local diameter of the first doped portion 10 at its upper face 11, to a second value. A second portion 30b then extends from the first portion 30a, and includes the three quantum wells 32 which each have a substantially identical local diameter.
    Each quantum well 32 is covered at its lateral edge 33 with a passivation layer 34, here GaN, or even AlN or AIGaN. This passivation layer 34 has a thickness greater than or equal to 2 nm and advantageously between 2 nm and 15 nm. In this example, the passivation layer 34 comprises a first lateral portion 34a, in contact with the lateral edge 33 of the quantum wells, obtained simultaneously with the formation of the quantum wells. It advantageously comprises a second lateral portion 34b, which covers the first passivation portion 34a and forms the side wall 35 of the active portion. This second passivation portion 34b is formed distinctly at the quantum well formation step. This second passivation portion 34b thus forms the side wall 35 of the active portion and may cover the lateral edge of the first doped portion 10.
    The epitaxial formation of the first part 30a of the active portion 30 can be obtained by decreasing the growth temperature to a value T2 less than the growth value Ti of the first doped portion, for example between 600 ° C. and 800 ° C. for example 670 ° C. In addition, the ratio lll / V nominal, here the ratio Ga / N, has a value (lll / V) 2 greater than the value (lll / V) i growth of the first doped portion. Thus, the first part 30a of the active portion 30, GaN, whose maximum local diameter depends on the values of the temperature and the ratio lll / V nominal. The active portion then has a substantially constant local diameter.
    The epitaxial formation of the layers 32 forming the quantum wells is obtained by introducing an indium flux according to a value of the nominal ln / lll ratio of between 5% and 70%, and preferably between 10% and 50%, depending on the desired optical emission properties of the wire. An alternation of layers forming the InGaN quantum wells and GaN barrier layers is thus formed. Concomitant with the formation of the quantum wells, a passivation layer 34, here in GaN, is formed at the lateral edge 33 of the quantum wells 32.
    An optional step of forming a second passivation layer side portion 34b 34 may then be performed, during which the indium flow is stopped. The growth temperature may be substantially equal to or even greater than the value corresponding to the growth of the active portion. The value of the ratio lll / N nominal is for example substantially equal to 1.5. The second side portion of the passivation layer covers the first portion of the passivation layer and may also cover the lateral edge of the first n-doped portion.
    The second doped portion 20 provided with an electron blocking layer is then formed from the operating conditions described above.
    Similarly to the embodiment described with reference to FIG. 5, the optoelectronic device may comprise a plurality of three-dimensional semiconductor structures 2 in mutual contact at the level of the active portions 30. The quantum wells 32 of the same active portion 30 then being separated from the quantum wells 32 of the adjacent active portion by the first lateral portion 34a of the passivation layer 34.
    Figure 6b is a schematic and partial view of a section of another three-dimensional semiconductor structure of an optoelectronic device in wire and axial configuration. The three-dimensional semiconductor structure is similar to that described with reference to Figure 6a and differs essentially in that the active portion 30 comprises multiple quantum wells 32 in the form of quantum boxes interposed along the longitudinal axis between barrier layers.
    Such a three-dimensional semiconductor structure can be obtained according to the method described above with reference to the variant of FIG. 6a, and differs from it essentially in that the ratio ln / lll has a value greater than a threshold value, this value being approximately equal to 20% in the case of InGaN quantum wells based on a GaN barrier layer.
    In a manner similar to the embodiment described with reference to FIG. 5, the optoelectronic device may comprise a plurality of three-dimensional semiconductor structures in mutual contact at the level of the active portions. The quantum boxes of the same active portion are then separated from the quantum boxes of the adjacent active portion by the first lateral portion of the passivation layer.
    Specific embodiments have just been described. Various variations and modifications will occur to those skilled in the art.
    Three-dimensional semiconductor structures adapted to emit light radiation from an electrical signal have been described, thereby forming light-emitting diodes. Alternatively, the structures may be adapted to detect incident light radiation and to respond to an electrical signal thereby forming a photodiode. Applications may be in the field of optoelectronics or photovoltaics.
    权利要求:
    Claims (15)
    [1" id="c-fr-0001]
    An optoelectronic device (1) comprising at least one three-dimensional semiconductor structure (2) extending along a longitudinal axis (Δ) substantially orthogonal to a plane of a substrate (3) on which it rests, and comprising: - a first doped portion (10) extending from one side of the substrate (3) along the longitudinal axis (Δ); an active portion (30) comprising at least one quantum well (32), extending from the first doped portion (10) along the longitudinal axis (Δ); a second doped portion (20) extending from the active portion (30) along the longitudinal axis (Δ); characterized in that the quantum well (32) of the active portion (30) has a mean diameter greater than that of said first doped portion (10), and is laterally covered by a passivation layer (34).
    [2" id="c-fr-0002]
    Optoelectronic device (1) according to claim 1, comprising a plurality of three-dimensional semiconductor structures (2) extending substantially parallel to each other, the active portions (30) of which are in mutual contact.
    [3" id="c-fr-0003]
    An optoelectronic device (1) according to claim 2, wherein the one or more quantum wells (32) of each active portion (30) are separated from the one or more quantum wells (32) of the adjacent active portion (30) by the layers. passivation (34) in mutual contact.
    [4" id="c-fr-0004]
    4. Optoelectronic device (1) according to claim 2 or 3, having a density of first doped portions (10) per unit area of the substrate (3) between 0.5.1010 cnr2 and 1.5.1010 cm "2, the first portions doped (10) being distinct from each other and having a substantially constant average diameter along the longitudinal axis (Δ).
    [5" id="c-fr-0005]
    Optoelectronic device (1) according to any one of claims 1 to 4, the passivation layer (34) having an average thickness greater than or equal to 2 nm, and preferably between 2 nm and 15 nm.
    [6" id="c-fr-0006]
    6. Optoelectronic device (1) according to any one of claims 1 to 5, the first doped portion (10) being made of a compound III-V, a compound II-VI, or an element or compound IV, the layer of passivation (34) being made of a compound comprising at least one element present in the compound of the first doped portion.
    [7" id="c-fr-0007]
    7. Optoelectronic device (1) according to any one of claims 1 to 6, the average diameter of the quantum well (s) (32) being between 115% and 250% of the average diameter of the first doped portion (10).
    [8" id="c-fr-0008]
    Optoelectronic device (1) according to any one of claims 1 to 7, the active portion (30) comprising a single quantum well (32) extending continuously between the first and second doped portions (10, 20), and said single quantum well (32) being laterally covered by the passivation layer (34).
    [9" id="c-fr-0009]
    Optoelectronic device (1) according to any one of claims 1 to 7, wherein the active portion (30) comprises a plurality of layers (32) forming quantum wells or quantum boxes interposed between barrier layers, covered laterally by the layer passivation (34).
    [10" id="c-fr-0010]
    10. Optoelectronic device (1) according to any one of claims 1 to 9, the three-dimensional semiconductor structure (2) being made of a material comprising predominantly a III-N compound, the passivation layer (34) being preferably made of a compound selected from GaN, AIGaN and AIN.
    [11" id="c-fr-0011]
    11. A method of producing an optoelectronic device (1) according to any one of the preceding claims, wherein the one or more three-dimensional semiconductor structures (2) are formed by molecular beam epitaxy.
    [12" id="c-fr-0012]
    The method of claim 11, comprising steps of epitaxially growing at least one three-dimensional semiconductor structure (2) wherein: i) forming the first doped portion (10), which extends from a face of the substrate (3) along the longitudinal axis (Δ); ii) forming the active portion (30) comprising at least one quantum well (32), which extends from the first portion doped along the longitudinal axis (Δ); characterized in that: during step ii), the quantum well (32) of the active portion (30) is formed so as to have a mean diameter greater than that of the first doped portion (10); - a passivation layer (34) is further formed which laterally covers the quantum well (32).
    [13" id="c-fr-0013]
    The method of claim 12 wherein the formation of the passivation layer (34) is concomitant with the formation of the quantum well (32).
    [14" id="c-fr-0014]
    14. A method according to any one of claims 11 to 13, the three-dimensional semiconductor structure (2) comprising predominantly a compound III-V, wherein the step ii) of forming the active portion (30) is performed at a value (T2) of epitaxial growth temperature lower than a value (Ti) during step i) of forming the first doped portion, and preferably between 600 ° C and 680 ° C, and is carried out at a ratio between the atomic fluxes of the elements III on the elements V between 0.33 and 0.60.
    [15" id="c-fr-0015]
    15. The method of claim 14, wherein the step i) of forming the first doped portion (10) comprises a sub-step of nucleation of the compound III-V carried out at a growth temperature so that a density first doped portions (10) per unit area of the substrate is between 0.5 x 10 10 cm 2 and 1.5 x 10 10 cm 2.
    类似技术:
    公开号 | 公开日 | 专利标题
    EP2617069B1|2014-12-03|Nanowire-based optoelectronic device for light emission
    EP3384537B1|2019-10-30|Optoelectronic apparatus comprising tridimensional semiconductor structures in axial configuration
    EP2979307B1|2019-07-24|Light-emitting diode with multiple quantum wells and asymmetric p-n junction
    EP3024037B1|2020-05-13|Light emitting diode with doped quantum wells and corresponding method of fabrication
    EP2997607B1|2018-07-18|Optoelectronic device and method for manufacturing same
    EP3347917B1|2019-10-30|Electroluminescent device with integrated light sensor
    FR2923651A1|2009-05-15|PN junction forming method for nanowire of e.g. LED, involves polarizing conductor element such that regions are created in nanowire, where regions comprise conductivity carriers provided with PN junction between them
    EP3503222B1|2020-08-12|Method for manufacturing an optoelectronic device by transferring a conversion structure onto an emission structure
    EP3479409B1|2021-08-04|Optoelectronic device comprising three-dimensional diodes
    FR2964796A1|2012-03-16|Optoelectronic light emitting device i.e. gallium nitride based LED, has p-doped planarized layer allowing radial injection of holes in nanowire, and n-type silicon substrate allowing axial injection of electrons in nanowire
    WO2018002497A1|2018-01-04|Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements
    FR2953335A1|2011-06-03|LASER EMISSION SYSTEM, HETEROSTRUCTURE AND ACTIVE ZONE WITH QUANTIC COUPLED SUB-WELLS, USE FOR 1.55 MICROMETER LASER EMISSION
    WO2017093645A1|2017-06-08|Optoelectronic device comprising three-dimensional semiconductor structures with a wider single-crystal portion
    FR3080487A1|2019-10-25|METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE WITH DIODE ARRAY
    EP3144983B1|2018-03-28|Electroluminescent device with multiple quantum wells
    EP3732725B1|2022-03-09|Optoelectronic device with matrix of three-dimensional diodes
    EP2827390B1|2018-10-17|Emissive structure with lateral injection of carriers
    FR3109469A1|2021-10-22|Method of manufacturing a radiation emitting device
    EP3732735A1|2020-11-04|Optoelectronic device comprising three-dimensional light-emitting diodes
    FR3098992A1|2021-01-22|Light-emitting diode and method of manufacturing
    FR2969995A1|2012-07-06|Producing nitride nanostructures e.g. nanowires on side of substrate, by forming base of nanostructures made of wurtzite nitride phase on substrate, and forming upper part of nanostructures made of nitrides having zinc-blende phase on base
    FR3091622A1|2020-07-10|Optoelectronic semiconductor structure comprising a p-type injection layer based on InGaN
    同族专利:
    公开号 | 公开日
    CN108713258A|2018-10-26|
    FR3044470B1|2018-03-23|
    US20180351037A1|2018-12-06|
    EP3384537B1|2019-10-30|
    EP3384537A1|2018-10-10|
    US10403787B2|2019-09-03|
    JP2019502257A|2019-01-24|
    KR20180112764A|2018-10-12|
    CN108713258B|2021-02-02|
    WO2017093646A1|2017-06-08|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    EP2665100A2|2012-05-14|2013-11-20|National Tsing Hua University|Light-emitting diode display and method of producing the same|
    WO2014138904A1|2013-03-14|2014-09-18|The Royal Institution For The Advancement Of Learning/Mcgill University|Methods and devices for solid state nanowire devices|WO2020260541A1|2019-06-25|2020-12-30|Aledia|Method for homogenising the cross-section of nanowires for light-emitting diodes|JP2002184970A|2000-12-15|2002-06-28|Fujitsu Ltd|Semiconductor device including quantum dots, its fabricating method and semiconductor laser|
    TWI500072B|2004-08-31|2015-09-11|Sophia School Corp|Manufacturing method for light emitting element|
    EP2126986B1|2006-12-22|2019-09-18|QuNano AB|Led with upstanding nanowire structure and method of producing such|
    US8670471B2|2009-02-27|2014-03-11|California Institute Of Technology|Photonic crystal cavities and related devices and methods|
    KR102188494B1|2014-07-21|2020-12-09|삼성전자주식회사|Semiconductor light emitting device, manufacturing method of the semiconductor light emitting device and manufacturing method of semiconductor light emitting device package|FR3064109A1|2017-03-20|2018-09-21|Commissariat A L'energie Atomique Et Aux Energies Alternatives|NANOWRY STRUCTURE AND METHOD FOR PRODUCING SUCH A STRUCTURE|
    JP2020107701A|2018-12-27|2020-07-09|日亜化学工業株式会社|Light-emitting element and method for manufacturing the same|
    FR3098013B1|2019-06-25|2021-07-02|Commissariat Energie Atomique|Method of manufacturing an optoelectronic device using axial type light-emitting diodes|
    法律状态:
    2016-11-30| PLFP| Fee payment|Year of fee payment: 2 |
    2017-06-02| PLSC| Publication of the preliminary search report|Effective date: 20170602 |
    2017-11-30| PLFP| Fee payment|Year of fee payment: 3 |
    2019-11-24| PLFP| Fee payment|Year of fee payment: 5 |
    2021-08-06| ST| Notification of lapse|Effective date: 20210705 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1561589A|FR3044470B1|2015-11-30|2015-11-30|OPTOELECTRONIC DEVICE COMPRISING THREE DIMENSIONAL SEMICONDUCTOR STRUCTURES IN AXIAL CONFIGURATION|
    FR1561589|2015-11-30|FR1561589A| FR3044470B1|2015-11-30|2015-11-30|OPTOELECTRONIC DEVICE COMPRISING THREE DIMENSIONAL SEMICONDUCTOR STRUCTURES IN AXIAL CONFIGURATION|
    PCT/FR2016/053122| WO2017093646A1|2015-11-30|2016-11-28|Optoelectronic device comprising three-dimensional semiconductor structures in an axial configuration|
    KR1020187018415A| KR20180112764A|2015-11-30|2016-11-28|An optoelectronic device including a three-dimensional semiconductor structure of an axial configuration|
    EP16813092.0A| EP3384537B1|2015-11-30|2016-11-28|Optoelectronic apparatus comprising tridimensional semiconductor structures in axial configuration|
    US15/779,388| US10403787B2|2015-11-30|2016-11-28|Optoelectronic device comprising three-dimensional semiconductor structures in an axial configuration|
    JP2018527796A| JP7010820B2|2015-11-30|2016-11-28|Photoelectron device having a three-dimensional semiconductor structure arranged in the axial direction|
    CN201680069412.8A| CN108713258B|2015-11-30|2016-11-28|Optoelectronic component comprising an axially formed three-dimensional semiconductor structure|
    [返回顶部]